| PART |
Description |
Maker |
| IRFL014N |
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管）
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFI1010N IRFI1010 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)
Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)
|
IRF[International Rectifier]
|
| IRFP064N IRFP064NPBF |
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?)
|
IRF[International Rectifier]
Power MOSFET
|
| IRFIZ46N |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V Rds(on)=0.020ohm Id=33A)
Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=33A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.020ohm，身份证\u003d 33A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF1010N IRF1010NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?
|
International Rectifier
|
| IRF5N4905 |
-55V Single P-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.024ohm, Id=-55A*)
SURFACE MOUNT (SMD-1) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.024ohm/ Id=-55A*)
|
IRF[International Rectifier]
|
| IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)
(IRFZ44NL / IRFZ44NS) Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 49A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF5NJ5305 IRF5NJ5305SCX |
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)
22 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-22A*)
SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*)
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| IRLL2705PBF |
HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.04Ω , ID = 3.8A )
HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.04ヘ , ID = 3.8A )
|
International Rectifier
|
| IRF5M3205 |
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.015ohm, Id=35A)
THRU-HOLE (TO-254AA) 55V, N-CHANNEL
|
IRF[International Rectifier]
|
